copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 1 /6 SW20N20D absolute maximum ratings symbol parameter value unit v dss drain to source voltage 200 v i d continuous drain current (@t c =25 o c) 20* a continuous drain current (@t c =100 o c) 13* a i dm drain current pulsed (note 1) 80 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 234 mj e ar repetitive avalanche energy (note 1) 17 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 166.7 w derating factor above 25 o c 1.3 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c thermal characteristics symbol parameter value unit r thj c thermal resistance, junction to case 0.75 o c /w *. drain current is limited by junction temperature. 1. gate 2. drain 3. source order codes item sales type marking package packaging 1 sw d 20n20d SW20N20D to - 252 reel n - channel enhanced mode to - 252 mosfet features ? high ruggedness ? low r ds( on ) (t yp 0.16 ? )@v gs =10v ? low gate charge ( typ 37nc) ? improved dv/dt capability ? 100% avalanche tested ? application:led,dc - dc general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. bv dss : 200v i d : 20a r ds(on) : 0.16? 1 2 3 to - 252 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 2 /6 SW20N20D electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off ch188aracteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 200 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.2 v/ o c i dss drain to source leakage current v ds =200v, v gs =0v 1 ua v ds =160v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 20v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d =10a 0.15 0.18 ? g fs forward transconductance v ds =10v, i d =10a 12 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 2070 pf c oss output capacitance 188 c rss reverse transfer capacitance 46 t d(on) turn on delay time v ds =100v, i d =20a, r g =25?, v gs =10v (note 4,5) 19 ns t r rising time 82 t d(off) turn off delay time 88 t f fall time 71 q g total gate charge v ds =160v, v gs =10v, i d =20a (note 4,5) 37 nc q gs gate - source charge 9 q gd gate - drain charge 13 r g gate resistance v ds =0v, scan f mode 1.5 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 20 a i sm pulsed source current 80 a v sd diode forward voltage drop. i s =20a, v gs =0v 1.4 v t rr reverse recovery time i s =20a, v gs =0v, di f / dt =100a/us 192 ns q rr reverse recovery charge 1.4 u c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =1.17mh, i as =20a, v dd =50v, r g =25?, starting t j = 25 o c 3. i sd 20a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 3 /6 SW20N20D fig. 1. on - state characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 4. on - state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on - resistance variation vs. junction temperature fig. 2. t ransfer characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 4 /6 SW20N20D fig. 9 . maximum safe operating area fig. 10. transient thermal response curve fig. 8. c apacitance characteristics fig. 7. gate charge characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 5 /6 SW20N20D v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 12 . switching time test circuit & waveform fig. 13 . unclamped inductive switching test circuit & waveform fig. 11. gate charge test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. j an . 2017. rev. 2.0 6 /6 SW20N20D disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 14 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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